View hgtg12n60d1d datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 12A, 600V • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Terminal Diagram transistor. The much lower on-state voltage drop varies only N-CHANNEL ENHANCEMENT MODE moderately between +25oC and +150oC. The diode used in C parallel with the IGBT is an ultrafast (tRR < 60ns) with
Keywords
hgtg12n60d1d Datasheet, Design, MOSFET, Power
hgtg12n60d1d RoHS, Compliant, Service, Triacs, Semiconductor
hgtg12n60d1d Database, Innovation, IC, Electricity
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet