View hgtg12n60d1d datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time <500ns GATE Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) With Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching
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hgtg12n60d1d Datasheet, Design, MOSFET, Power
hgtg12n60d1d RoHS, Compliant, Service, Triacs, Semiconductor
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