View hgtg12n60d1d datasheet:

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 • 12A, 600V • Latch Free Operation EMITTER COLLECTOR • Typical Fall Time <500ns GATE • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Terminal Diagram transistor. The much lower on-state voltage drop varies only N-CHANNEL ENHANCEMENT MODE moderately between +25oC and +150oC. The diode used in C parallel with the IGBT is an ultrafast (tRR < 60ns) with