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hgtg20n6

S E M I C O N D U C T O R HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package 40A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 140ns at +150oC E C Short Circuit Rated G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG20N60B3D is a MOS gated high voltage switching device comb

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