View hgtg30n6 datasheet:

S E M I C O N D U C T O R HGTG30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 63A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 230ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a bipolar transistor. Terminal Diagram The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the development N-CHANNEL ENHANCEMENT MODE type TA49051. The diode used in anti-parallel with