View hgtg30n6 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
S E M I C O N D U C T O R HGTG30N60C3D 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 63A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 230ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG30N60C3D is a MOS gated high voltage switching device
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