View hgtg32n6 datasheet:

S E M I C O N D U C T O R HGTG32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 32A, 600V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time - 600ns COLLECTOR GATE (BOTTOM SIDE • High Input Impedance METAL) • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combin- ing the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC Terminal Diagram and +150oC. N-CHANNEL ENHANCEMENT MODE IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essen- C