View hgtg32n6 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
S E M I C O N D U C T O R HGTG32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 32A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time - 600ns COLLECTOR GATE (BOTTOM SIDE High Input Impedance METAL) Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combin- ing the best features of MOSFETs and b
Keywords
hgtg32n6 Datasheet, Design, MOSFET, Power
hgtg32n6 RoHS, Compliant, Service, Triacs, Semiconductor
hgtg32n6 Database, Innovation, IC, Electricity
LIST
Last Update
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS