View hgtg34n1 datasheet:

S E M I C O N D U C T O R HGTG34N100E2 34A, 1000V N-Channel IGBT April 1995 Features Package JEDEC STYLE TO-247 • 34A, 1000V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time - 710ns COLLECTOR GATE (BOTTOM SIDE • High Input Impedance METAL) • Low Conduction Loss Description The HGTG34N100E2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately Terminal Diagram between +25oC and +150oC. N-CHANNEL ENHANCEMENT MODE The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conducti