View hgtp10n4 datasheet:

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE(ON): 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR (FLANGE) • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB • Power Supplies EMITTER • Motor Drives COLLECTOR COLLECTOR GATE (FLANGE) • Protection Circuits Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation appl