View hgtp12n6 datasheet:

S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB • 12A, 600V EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time <500ns GATE • High Input Impedance COLLECTOR • Low Conduction Loss (FLANGE) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Terminal Diagram transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar N-CHANNEL ENHANCEMENT MODE transistor. The much lower on-state voltage drop varies only C moderately between +25oC and +150oC. The IGBTs are ideal for many high voltage switching applica- tions operating at frequencies where low conduction losses are essential, such as