View hgtp12n6 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
S E M I C O N D U C T O R HGTP12N60D1 12A, 600V N-Channel IGBT April 1995 Features Package JEDEC TO-220AB 12A, 600V EMITTER Latch Free Operation COLLECTOR Typical Fall Time <500ns GATE High Input Impedance COLLECTOR Low Conduction Loss (FLANGE) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar Terminal D
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hgtp12n6 Datasheet, Design, MOSFET, Power
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