View hgtp14n3 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
HGTP14N36G3VL, S E M I C O N D U C T O R HGT1S14N36G3VL, HGT1S14N36G3VLS 14A, 360V N-Channel, June 1995 Logic Level, Voltage Clamping IGBTs Features Packages JEDEC TO-220AB • Logic Level Gate Drive EMITTER COLLECTOR • Internal Voltage Clamp GATE • ESD Gate Protection COLLECTOR (FLANGE) • TJ = 175oC • Ignition Energy Capable JEDEC TO-262AA Description EMITTER COLLECTOR This N-Channel IGBT is a MOS gated, logic level device GATE which is intended to be used as an ignition coil driver in auto- COLLECTOR (FLANGE) motive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which pro- vides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for JEDEC TO-263A
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hgtp14n3 Datasheet, Design, MOSFET, Power
hgtp14n3 RoHS, Compliant, Service, Triacs, Semiconductor
hgtp14n3 Database, Innovation, IC, Electricity
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