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huf76139

HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 75A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.0075? innovative UltraFET™ process. This advanced process technology • Temperature Compensating PSPICE® Model achieves the lowest possible on-resistance per silicon area, • Temperature Compensating SABER© Model resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • Thermal Impedance SPICE Model diode exhibits very low reverse recovery time and stored • Thermal Impedance SABER Model charge. It was designed for use in applications wher

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