View hfa08tb120 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Bulletin PD -2.383 rev. C 11/00 HFA08TB120 TM HEXFRED Ultrafast, Soft Recovery Diode BASE CATHODE VR = 1200V Features VF (typ.)* = 2.4V 4 • Ultrafast Recovery IF (AV) = 8.0A • Ultrasoft Recovery Qrr (typ.)= 140nC • Very Low IRRM 2 IRRM (typ.) = 4.5A • Very Low Qrr • Specified at Operating Conditions trr (typ.) = 28ns 1 3 CATHODE ANODE di(rec) M /dt (typ.)* = 85A /µs 2 Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count TO-220AC Description International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristic
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hfa08tb120 Datasheet, Design, MOSFET, Power
hfa08tb120 RoHS, Compliant, Service, Triacs, Semiconductor
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