View hfa08tb120s datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S TM HEXFRED Ultrafast, Soft Recovery Diode Features VR = 1200V (K) • Ultrafast Recovery VF(typ.)* = 2.4V BASE • Ultrasoft Recovery + • Very Low IRRM IF(AV) = 8.0A 2 • Very Low Qrr Qrr (typ.)= 140nC • Guaranteed Avalanche IRRM(typ.) = 4.5A • Specified at Operating Conditions Benefits trr(typ.) = 28ns 1 3 (N/C) (A) • Reduced RFI and EMI _ di(rec)M/dt (typ.)* = 85A/µs • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing • Reduced Parts Count Description International Rectifier's HFA08TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of
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hfa08tb120s Datasheet, Design, MOSFET, Power
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