View irfi5210 datasheet:

PD - 9.1404A IRFI5210 PRELIMINARY HEXFET� Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

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