View irfm220a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) : 0.626 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 Continuous Drain Current (TA=25 oC ) 1.13 ID A o Continuous Drain Current (TA=70 C ) 0.9 IDM Drain Current-Pulsed 9 A 1 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 77 mJ O IAR Avalanche Current 1.13 A 1 O EAR Repetitive Avalanche Energy 1 mJ 0.24 O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O 2.4 W PD To