View irfp240a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 20 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 ) C 20 ID A Continuous Drain Current (TC=100 oC) 12.7 IDM Drain Current-Pulsed A 1 80 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 267 O IAR Avalanche Current 20 A 1 O EAR Repetitive Avalanche Energy 1 18 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O Total Power Diss