View irfp250a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C) 32 ID A o C Continuous Drain Current (TC=100 ) 20.3 1 IDM Drain Current-Pulsed A O 130 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 683 1 IAR Avalanche Current O 32 A EAR Repetitive Avalanche Energy 1 20.4 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O Total Power Di