View irfp250n datasheet:

PD - 94008 IRFP250N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-22