View irfp350a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 ? Continuous Drain Current (TC=25 ) 17 ID A ? Continuous Drain Current (TC=100 ) 10.8 1 IDM Drain Current-Pulsed O 68 A VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy O 1156 mJ 1 IAR Avalanche Current 17 A O EAR Repetitive Avalanche Energy 1 O 20.2 mJ 3 dv/dt Peak Diode Recovery dv/dt O 4.0 V/ns ? Total Power D