View irfr210a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V ? Low RDS(ON) : 1.169 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C) 2.7 ID A Continuous Drain Current (TC=100 o ) C 1.7 IDM Drain Current-Pulsed 10 A 1 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 44 mJ O IAR Avalanche Current 2.7 A 1 O EAR Repetitive Avalanche Energy 1 2.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt 5.0 V/ns O Tota