View irfs30n20d datasheet:

PD- 93832 IRFB30N20D IRFS30N20D SMPS MOSFET IRFL30N20D HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.082? 30A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB D2Pak TO-262 Fully Characterized Avalanche Voltage IRFB30N20D IRFS30N20D IRFL30N20D and Current Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 30 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 120 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 200 Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode