View irfz24n datasheet:

PD - 91354A IRFZ24N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 55V 175°C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 17A S Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area

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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050