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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

irl540n

PD - 91495A IRL540N HEXFET® Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.044? Fast Switching G Fully Avalanche Rated ID = 36A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. Th

Keywords

 irl540n Datasheet, Design, MOSFET, Power

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 irl540n Database, Innovation, IC, Electricity

 

 
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