View irli540n datasheet:

PD - 9.1497A IRLI540N PRELIMINARY HEXFET� Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 100V Isolated Package High Voltage Isolation = 2.5KVRMS RDS(on) = 0.044? Sink to Lead Creepage Dist. = 4.8mm G Fully Avalanche Rated ID = 23A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

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