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irlms1902

PD - 9.1540B IRLMS1902 HEXFET Power MOSFET Generation V Technology Micro6 Package Style VDSS = 20V Ultra Low Rds(on) N-Channel MOSFET RDS(on) = 0.10? Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized d

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 irlms1902 Datasheet, Design, MOSFET, Power

 irlms1902 RoHS, Compliant, Service, Triacs, Semiconductor

 irlms1902 Database, Innovation, IC, Electricity

 

 
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