View irlms2002 datasheet:

PD- 93758C IRLMS2002 HEXFET® Power MOSFET Ultra Low On-Resistance A 1 6 N-Channel MOSFET D D VDSS = 20V Surface Mount 2 5 D Available in Tape & Reel D 2.5V Rated 3 4 G S RDS(on) = 0.030? Top View Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6? package with its customized leadframe produces a HEXFET? power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a c