View irlms4502 datasheet:

PD- 93759A IRLMS4502 HEXFET® Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -12V Surface Mount 2 5 D D Available in Tape & Reel 3 4 G S RDS(on) = 0.042? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction ? Micro6? ? ? ? e