View irlms5703 datasheet:

PD - 9.1413D IRLMS5703 HEXFET® Power MOSFET Generation V Technology A 1 6 Micro6 Package Style D D VDSS = -30V Ultra Low Rds(on) 2 5 D D P-Channel MOSFET 3 4 G S RDS(on) = 0.20? Description T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is Micro6 ideal for applicat