View irlr110a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25oC) 4.7 ID A Continuous Drain Current (TC=100oC) 3 1 IDM Drain Current-Pulsed 16 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 58 mJ O IAR Avalanche Current 1 4.7 A O EAR Repetitive Avalanche Energy 1 2.2 mJ O 3 dv/dt Peak Diode Recovery dv/dt 6.5 V/ns O * Total Pow