View irlr3303 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
PD- 91316F IRLR/U3303 HEXFET® Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3303) Straight Lead (IRLU3303) RDS(on) = 0.031? G Advanced Process Technology Fast Switching ID = 35A S Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. D -P ak I-Pak The D-PAK is designed for surface mounting using vapor phase, infrared, or T O-252AA TO-251AA wave soldering
Keywords
irlr3303 Datasheet, Design, MOSFET, Power
irlr3303 RoHS, Compliant, Service, Triacs, Semiconductor
irlr3303 Database, Innovation, IC, Electricity
