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irlr8103v

PD-94021A IRLR8103V • N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses D • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications Description G This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced S D-Pak conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8103V has been optimized for all parameters DEVICE CHARACTERISTICSU that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. IRLR8103V The IRLR8103V offers an extremely low combination of Qsw & R

Keywords

 irlr8103v Datasheet, Design, MOSFET, Power

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 irlr8103v Database, Innovation, IC, Electricity

 

 
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