View irlsz24a sam datasheet:

IRLSZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.075 ? Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area µA (Max.) @ VDS = 60V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25oC) 14 ID A Continuous Drain Current (TC=100oC) 10 IDM Drain Current-Pulsed 1 56 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 168 mJ O IAR Avalanche Current 1 14 A O EAR Repetitive Avalanche Energy mJ 1 3.1 O dv/dt Peak Diode Recover