View irlz24a sam datasheet:

IRLZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive ? RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area µA (Max.) @ VDS = 60V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25oC) 17 ID A Continuous Drain Current (TC=100oC) 12 IDM Drain Current-Pulsed 1 60 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 149 mJ O IAR Avalanche Current 1 17 A O EAR Repetitive Avalanche Energy mJ 1 4.5 O dv/dt Peak Diode Recovery