All Transistors. Datasheet

 

View itc14407 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

itc14407

JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS (25?C) VCES 1600V n - Channel. IC(CONT) 75A Enhancement Mode. VCE(sat) 3.3V High Input Impedance. High Switching Speed. Latch-Free Operation. Low Forward Voltage Drop. Short Circuit Capability (10µs). RATINGS Symbol Parameter Test Conditions Max. Units VCES Collector-emitter voltage VGE = 0V 1600 V VGE Gate-emitter voltage - ±20 V IC(CONT) Continuous collector current - 75 A IC(PK) Peak collector current tp = 1ms 150 A STATIC ELECTRICAL CHARACTERISTICS Measured under pulse conditions Tcase = 25?C Symbol Parameter Test Conditions Min. Typ. Max. Units ICES Collector cut-off current VGE = 0V, VCE = VCES - - 2 mA IGES Gate leakage curre

Keywords

 itc14407 Datasheet, Design, MOSFET, Power

 itc14407 RoHS, Compliant, Service, Triacs, Semiconductor

 itc14407 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.