View ir155dm16ccb datasheet:

Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics Parameters Units Test Conditions VFM Maximum Forward Voltage 1100 mV TJ = Amb., IF = 15 A VRRM Reverse Breakdown Voltage Range 1600 V (*) TJ = Amb., IRRM = 50 µA (**) (*) Wafer and die Probe test clamped at 1200V to limit arcing. 1600V BV testable only in encapsulated packages (**) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Nominal Front Metal Composition, Thickness 100% Al, (20 µm) Chip Dimensions 155 x 155 mils (see drawing) Wafer