View irf150 datasheet:

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET?TRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055? 38A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-3 tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, Repetitive Avalanche Ratings very fast switching, ease of paralleling and temperature