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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Advance Information IRF530 TMOS E-FET.? Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.16 W recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, ? these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage tran- sients. • Avalanche Energy Spec