View irf530a datasheet:

IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µA (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) C 14 ID A ? Continuous Drain Current (TC=100 ) C 9.9 IDM Drain Current-Pulsed 1 56 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 261 mJ O IAR Avalanche Current 1 14 A O EAR Repetitive Avalanche Energy 1 5.5 mJ O 3 dv/dt