View irf530a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 ) 14 ID A ? Continuous Drain Current (TC=100 ) 9.9 1 IDM Drain Current-Pulsed A 56 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 261 O IAR Avalanche Current 1 14 A O EAR Repetitive Avalanche Energy 1 5.5 mJ O 3 dv/dt Peak Diode Recovery dv/