View irf530fp datasheet:

IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530FP 100 V < 0.16 ? 10 A TYPICAL R = 0.12 ? DS(on) 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220FP APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTER AUTOMOTIVE ENVRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, Etc) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR 100 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC 10