View irf620a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 Continuous Drain Current (TC=25 o ) C 5 ID A Continuous Drain Current (TC=100 o C) 3.2 IDM Drain Current-Pulsed A 1 18 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 67 O IAR Avalanche Current 5 A 1 O EAR Repetitive Avalanche Energy 1 4.7 mJ O dv/dt Peak Diode Recovery dv/dt 3 5.0 V/ns O Total Power Dissipati