View irf630a sam datasheet:

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C) 9 ID A o C Continuous Drain Current (TC=100 ) 5.7 IDM Drain Current-Pulsed 1 36 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 162 O IAR Avalanche Current 1 9 A O EAR Repetitive Avalanche Energy 1 mJ 7.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipati