View irf630n datasheet:

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating 175°C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30? Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications