View irf7343 datasheet:

PD -91709 IRF7343 HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050? 0.105? Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal c