View irf7413 datasheet:

PD- 91330F IRF7413 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.6 A IDM Pulsed Drain Current 96 PD @TA = 25°C Power Dissipation„ 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt † 1.0 V/ns TJ Operating Junct