View irf7701 datasheet:

PD - 93940 IRF7701 HEXFET® Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET 0.011@VGS = -4.5V -10A Very Small SOIC Package -12V 0.015@VGS = -2.5V -8.5A Low Profile (< 1.1mm) 0.022@VGS = -1.8V -7.0A Available in Tape & Reel Description HEXFET® power MOSFETs from International Rectifier 1 8 D utilize advanced processing techniques to achieve ex- 2 7 tremely low on-resistance per silicon area. This benefit, 3 6 G combined with the ruggedized device design , that Inter- S 4 5 national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use 1 = D 8 = D 2 = S 7 = S in battery and load management. 3 = S 6 = S 4 = G 5 = D TSSOP-8 The TSSOP-8 package, has 45% less footprint area of the st