View irf7703 datasheet:

PD - 94221 IRF7703 HEXFET® Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -40V 28@VGS = -10V -6.0A Very Small SOIC Package 45@VGS = -4.5V -4.8A Low Profile (< 1.2mm) Available in Tape & Reel Description 1 8 D HEXFET® Power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6 tremely low on-resistance per silicon area. This benefit, G S 4 5 combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- 1 = D 8 = D signer with an extremely efficient and reliable device 2 = S 7 = S 3 = S 6 = S for battery and load management. 4 = G 5 = D TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. T