View irf7704 datasheet:

PD- 94160 IRF7704 HEXFET® Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -40V 46@VGS = -10V -4.6A Very Small SOIC Package 74@VGS = -4.5V -3.7A Low Profile (< 1.1mm) Available in Tape & Reel Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- 1 8 D tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- 2 7 3 6 national Rectifier is well known for, provides thedesigner G S 4 5 with an extremely efficient and reliable device for battery and load management. 1 = D 8 = D 2 = S 7 = S 3 = S 6 = S The TSSOP-8 package has 45% less footprint area than 4 = G 5 = D TSSOP-8 the standard SO-8. This