View irf7705 datasheet:

PD - 94001A IRF7705 HEXFET® Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -30V 18 @VGS = -10V -8.0A Very Small SOIC Package 30 @VGS = -4.5V -6.0A Low Profile ( < 1.2mm) Available in Tape & Reel Description 1 8 D HEXFET® power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6 G tremely low on-resistance per silicon area. This benefit, S 4 5 combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- 1 = D 8 = D 2 = S 7 = S signer with an extremely efficient and reliable device 3 = S 6 = S for use in battery and load management. 4 = G 5 = D TSSOP-8 The TSSOP-8 package has 45% less footprint area than the stan