View irf7706 datasheet:

PD -94003 IRF7706 HEXFET® Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -30V 22m?@VGS = -10V -7.0A Very Small SOIC Package 36m?@VGS = -4.5V -5.6A Low Profile (< 1.2mm) Available in Tape & Reel Description 1 8 D HEXFET® Power MOSFETs from International Rectifier 2 7 utilize advanced processing techniques to achieve ex- 3 6 tremely low on-resistance per silicon area. This benefit, G S 4 5 combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides the de- 1 = D 8 = D signer with an extremely efficient and reliable device 2 = S 7 = S 3 = S 6 = S for battery and load management. 4 = G 5 = D TSSOP-8 The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSO