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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

jds2s03s_

JDS2S03S TOSHIBA Diode Silicon Epitaxial Planar Type JDS2S03S VHF Tuner Band Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Small total capacitance: C = 0.7 pF (typ.) T • Low series resistance: r = 0.6 ? (typ.) s Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 100 mA Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C JEDEC ? JEITA ? TOSHIBA 1-1K1A Weight: 0.0011 g Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF 2 mA 0.85 V Reverse current IR VR 15 V 0.1 A Reverse voltage VR IR 1

Keywords

 jds2s03s Datasheet, Design, MOSFET, Power

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