View ksc2310 datasheet:

KSC2310 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER • Collector - Base Voltage VCBO=200V TO-92L • Current Gain-Bandwidth Product fT=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 50 mW Collector Dissipation PC 800 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ +150 1. Emitter 2. Collecor 3. Base ELECTRICAL CHARACTERISTICS (TA=25 ) Characteristic Symbol Test Conditions Min Typ Max Unit V Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 200 V Collector-Emitter Breakdown Voltage BVCEO IC=5mA, IB=0 150 V Emitter-Base Breakdown Voltage BVEBO IE=100 , IC=0 5 Collector Cut-off Curren